A thin film on a substrate is patterned so as to include an area in which a thin film transistor is to be formed and an area of another patterned thin film or a semiconductor device, and so as to have a size larger than the total size of the areas. Next, the patterned thin film is annealed. After the...http://www.google.fr/patents/US5580801?utm_source=gb-gplus-shareBrevet US5580801 - Method for processing a thin film using an energy beam
Method for processing a thin film using an energy beam