A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure...http://www.google.fr/patents/US6967981?utm_source=gb-gplus-shareBrevet US6967981 - Nitride based semiconductor structures with highly reflective mirrors
Nitride based semiconductor structures with highly reflective mirrors
