A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer...http://www.google.fr/patents/US8084344?utm_source=gb-gplus-shareBrevet US8084344 - Methods of fabricating a semiconductor device
