An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell...http://www.google.fr/patents/US7453755?utm_source=gb-gplus-shareBrevet US7453755 - Memory cell with high-K antifuse for reverse bias programming
Memory cell with high-K antifuse for reverse bias programming
