A random access memory circuit is described which uses single ferroelectric memory cells to store data. The ferroelectric memory cells can be selectively read using reference cells to generate a reference voltage which is compared to a voltage representative of data stored on the memory...http://www.google.fr/patents/US5751626?utm_source=gb-gplus-shareBrevet US5751626 - Ferroelectric memory using ferroelectric reference cells
Ferroelectric memory using ferroelectric reference cells
