A method for forming a metal layer located over a metal underlayer of a semiconductor device, using a metal halogen gas. The method involves supplying a predetermined reaction gas into a reaction chamber for a predetermined period of time prior to deposition of the metal layer. The reaction gas has a...http://www.google.fr/patents/US6458701?utm_source=gb-gplus-shareBrevet US6458701 - Method for forming metal layer of semiconductor device using metal halide gas
Method for forming metal layer of semiconductor device using metal halide gas
