The present invention is a multibit nonvolatile memory and its method of fabrication. According to the present invention a silicon channel body having a first and second channel surface is formed. A charge storage medium is formed adjacent to the first channel surface and a second charge storage medium...http://www.google.fr/patents/US6677204?utm_source=gb-gplus-shareBrevet US6677204 - Multigate semiconductor device with vertical channel current and method of fabrication
Multigate semiconductor device with vertical channel current and method of ...
