A method of forming a semiconductor substrate (and resultant structure), includes providing a semiconductor substrate to be silicided including a source and drain formed therein on respective sides of a gate, depositing a metal film over the gate, source and drain regions, reacting the metal film with...http://www.google.fr/patents/US6503833?utm_source=gb-gplus-shareBrevet US6503833 - Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe ...
