A separation layer (120) is provided on a substrate (100), and a thin film device (140) such as TFT is formed thereon. Separation accelerating ions such as hydrogen ions are implanted into the separation layer (120) in the course of the process for forming the thin film device (140). After the formation...http://www.google.fr/patents/US6700631?utm_source=gb-gplus-shareBrevet US6700631 - Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device
Method of separating thin-film device, method of transferring thin-film ...
