A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching processes. The body has ultra-thin...http://www.google.fr/patents/US7888721?utm_source=gb-gplus-shareBrevet US7888721 - Surround gate access transistors with grown ultra-thin bodies
Surround gate access transistors with grown ultra-thin bodies
