A method of preparing a polycrystalline thin film of a transition metal chalcogenide of an orientation on a substrate which includes (a) depositing a layer of a transition metal material or mixtures thereof on the substrate; and (b) heating the layer in an open system in a gaseous reducing atmosphere...http://www.google.fr/patents/US5958358?utm_source=gb-gplus-shareBrevet US5958358 - Oriented polycrystalline thin films of transition metal chalcogenides
Oriented polycrystalline thin films of transition metal chalcogenides
