In a manufacturing method of a junction gate field effect transistor, impurities of a first conductivity type are first implanted at a predetermined concentration into a monocrystal silicon layer separately formed on a region to be used as an active region in an insulating layer, and then surfaces of...http://www.google.fr/patents/US5141880?utm_source=gb-gplus-shareBrevet US5141880 - Manufacturing method of a junction gate field effect transistor
Manufacturing method of a junction gate field effect transistor
