A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are...http://www.google.fr/patents/US6664624?utm_source=gb-gplus-shareBrevet US6664624 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
