A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers...http://www.google.fr/patents/US20060027815?utm_source=gb-gplus-shareBrevet US20060027815 - Photonic crystal light emitting device with multiple lattices
Photonic crystal light emitting device with multiple lattices
Numéro de demande: 10/911,468 Numéro de publication: US 2006/0027815 A1 Date de dépôt: 4 août 2004 Brevet délivré: US7442964 ( Date de délivrance 28 oct. 2008)