Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon...http://www.google.fr/patents/US5569610?utm_source=gb-gplus-shareBrevet US5569610 - Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity
Method of manufacturing multiple polysilicon TFTs with varying degrees of ...
