A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators,...http://www.google.fr/patents/US20050127362?utm_source=gb-gplus-shareBrevet US20050127362 - Sectional field effect devices and method of fabrication
Sectional field effect devices and method of fabrication
Numéro de demande: 10/732,322 Numéro de publication: US 2005/0127362 A1 Date de dépôt: 10 déc. 2003 Brevet délivré: US7388258 ( Date de délivrance 17 juin 2008)
