A method for forming a semiconductor device, including providing a silicon substrate (10), forming a gate stack (11) on the substrate (10), coating a deep ultra-violet (DUV) photoresist (30) on the gate stack (11), exposing and developing the photoresist (30), and etching the gate stack (11). According...http://www.google.fr/patents/US5851927?utm_source=gb-gplus-shareBrevet US5851927 - Method of forming a semiconductor device by DUV resist patterning
Method of forming a semiconductor device by DUV resist patterning
