A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by...http://www.google.fr/patents/US7485545?utm_source=gb-gplus-shareBrevet US7485545 - Method of configuring a process to obtain a thin layer with a low density of holes
Method of configuring a process to obtain a thin layer with a low density of ...
