A method is disclosed for reducing metal diffusion in a semiconductor device. After forming a first metal portion over a substrate, a silicon carbon nitro-oxide (SiCNO) layer is deposited on the first metal portion. A dielectric layer is deposited over the SiCNO layer, and an opening is generated in...http://www.google.fr/patents/US7078336?utm_source=gb-gplus-shareBrevet US7078336 - Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
Method and system for fabricating a copper barrier layer with low dielectric ...
