A method for speeding up data writing and reducing power consumption by reducing the variation of the threshold voltage of each of non-volatile memory cells at data writing. When writing data in a memory cell, a voltage of about 8V is applied to the memory gate line, a voltage of about 5V is applied...http://www.google.fr/patents/US7085157?utm_source=gb-gplus-shareBrevet US7085157 - Nonvolatile memory device and semiconductor device
Nonvolatile memory device and semiconductor device
