An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and...http://www.google.fr/patents/US20030141521?utm_source=gb-gplus-shareBrevet US20030141521 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
Numéro de demande: 10/352,240 Numéro de publication: US 2003/0141521 A1 Date de dépôt: 28 janv. 2003 Brevet délivré: US7105392 ( Date de délivrance 12 sept. 2006)
