A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained...http://www.google.fr/patents/US5248630?utm_source=gb-gplus-shareBrevet US5248630 - Thin film silicon semiconductor device and process for producing thereof
Thin film silicon semiconductor device and process for producing thereof
