A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment....http://www.google.fr/patents/US4459338?utm_source=gb-gplus-shareBrevet US4459338 - Method of deposition of silicon carbide layers on substrates and product
Method of deposition of silicon carbide layers on substrates and product
