Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on...http://www.google.fr/patents/US20060046205?utm_source=gb-gplus-shareBrevet US20060046205 - Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device
Mask pattern for semiconductor device fabrication, method of forming the ...
Numéro de demande: 11/186,913 Numéro de publication: US 2006/0046205 A1 Date de dépôt: 21 juil. 2005 Brevet délivré: US7851125 ( Date de délivrance 14 déc. 2010)
