The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair...http://www.google.fr/patents/US20040099966?utm_source=gb-gplus-shareBrevet US20040099966 - Novel field effect transistor and method of fabrication
Novel field effect transistor and method of fabrication
Numéro de demande: 10/306,640 Numéro de publication: US 2004/0099966 A1 Date de dépôt: 27 nov. 2002 Brevet délivré: US6825506 ( Date de délivrance 30 nov. 2004)
