The magnetron sputtering apparatus of this invention has planar bodies 13 made of a material capable of capturing oxygen and water, heaters 14 to heat the planar bodies 13, an oxygen monitor 15 and others in a load lock chamber 11 and separate chamber 12. After a metal film has been formed on a silicon...http://www.google.fr/patents/US6271549?utm_source=gb-gplus-shareBrevet US6271549 - Process for fabricating a metal silicide layer of a semiconductor and apparatus
Process for fabricating a metal silicide layer of a semiconductor and apparatus
