Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable...http://www.google.fr/patents/US4392992?utm_source=gb-gplus-shareBrevet US4392992 - Chromium-silicon-nitrogen resistor material
