Combined e-beam and optical exposure lithography for semiconductor fabrication is disclosed. E-beam direct writing to is employed to create critical dimension (CD) areas of a semiconductor design on a semiconductor wafer. Optical exposure lithography is employed to create non-CD areas of the semiconductor...http://www.google.fr/patents/US6875624?utm_source=gb-gplus-shareBrevet US6875624 - Combined E-beam and optical exposure semiconductor lithography
Combined E-beam and optical exposure semiconductor lithography
