Improved process for preparing vertical transistor structures in DRAMs, in which the trench top oxide separates the bottom storage capacitor from the switching transistor, and in which the upper part of the trench contains the vertical transistor at its side wall, to obtain homogeneous gate oxidation...http://www.google.fr/patents/US6372567?utm_source=gb-gplus-shareBrevet US6372567 - Control of oxide thickness in vertical transistor structures
Control of oxide thickness in vertical transistor structures
