The current density versus voltage characteristics of integrated circuit processing equipment such as a plasma etcher are determined using a passive probe including a semiconductor wafer in which one or more clusters of individual passive charge monitors are fabricated. Each monitor includes an EEPROM...http://www.google.fr/patents/US5594328?utm_source=gb-gplus-shareBrevet US5594328 - Passive probe employing cluster of charge monitors for determining simultaneous charging characteristics of wafer environment inside IC process equipment
Passive probe employing cluster of charge monitors for determining ...
