A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers...http://www.google.fr/patents/US20020145127?utm_source=gb-gplus-shareBrevet US20020145127 - Chemical mechanical polishing slurry useful for copper substrates
Chemical mechanical polishing slurry useful for copper substrates
Numéro de demande: 10/099,492 Numéro de publication: US 2002/0145127 A1 Date de dépôt: 15 mars 2002 Brevet délivré: US6569350 ( Date de délivrance 27 mai 2003)
