A semiconductor device comprises an SAC structure having side wall spacers and offset nitride films. In particular, in this semiconductor device, the side wall spacers are constituted from lower side wall spacers that are composed of silicon oxide films and are in contact with the lower side of the gate...http://www.google.fr/patents/US6713337?utm_source=gb-gplus-shareBrevet US6713337 - Method for manufacturing a semiconductor device having self-aligned contacts
Method for manufacturing a semiconductor device having self-aligned contacts
