In one embodiment of the present invention, a method of forming semiconductor transistors includes: forming a gate electrode over but insulated from a semiconductor body region; forming off-set spacers along side-walls of the gate electrode; and after forming said off-set spacers, forming a source region...http://www.google.fr/patents/US20020123182?utm_source=gb-gplus-shareBrevet US20020123182 - TRANSISTOR WITH ULTA-SHORT GATE FEATURE AND METHOD OF FABRICATING THE SAME
TRANSISTOR WITH ULTA-SHORT GATE FEATURE AND METHOD OF FABRICATING THE SAME
Numéro de demande: 09/808,097 Numéro de publication: US 2002/0123182 A1 Date de dépôt: 13 mars 2001 Brevet délivré: US6746906 ( Date de délivrance 8 juin 2004)
