A thin film transistor is provided that includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer formed all over the substrate including the gate electrode. A first semiconductor layer is formed on the gate insulating layer, and a second semiconductor layer is formed...http://www.google.fr/patents/US20010010953?utm_source=gb-gplus-shareBrevet US20010010953 - Thin film transistor and method of fabricating the same
Thin film transistor and method of fabricating the same
Numéro de demande: 09/810,232 Numéro de publication: US 2001/0010953 A1 Date de dépôt: 19 mars 2001 Brevet délivré: US6455357 ( Date de délivrance 24 sept. 2002)
