A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously...http://www.google.fr/patents/US20020098711?utm_source=gb-gplus-shareBrevet US20020098711 - Electroless deposition of doped noble metals and noble metal alloys
Electroless deposition of doped noble metals and noble metal alloys
Numéro de demande: 10/085,182 Numéro de publication: US 2002/0098711 A1 Date de dépôt: 27 févr. 2002 Brevet délivré: US6693366 ( Date de délivrance 17 févr. 2004)
