Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high...http://www.google.fr/patents/US7365394?utm_source=gb-gplus-shareBrevet US7365394 - Process for fabricating thin film transistors
