A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface...http://www.google.fr/patents/US20050132800?utm_source=gb-gplus-shareBrevet US20050132800 - Semiconductor mechanical sensor
Numéro de demande: 11/062,935 Numéro de publication: US 2005/0132800 A1 Date de dépôt: 22 févr. 2005 Brevet délivré: US7040165 ( Date de délivrance 9 mai 2006)
