The invention is a method of depositing an aluminum nitride comprising layer over a semiconductor substrate, a method of forming DRAM circuitry, DRAM circuitry, a method of forming a field emission device, and a field emission device. In one aspect, a method of depositing an aluminum nitride comprising...http://www.google.fr/patents/US20030134443?utm_source=gb-gplus-shareBrevet US20030134443 - Methods Of Forming A Field Emission Device
Numéro de demande: 10/334,382 Numéro de publication: US 2003/0134443 A1 Date de dépôt: 30 déc. 2002 Brevet délivré: US6773980 ( Date de délivrance 10 août 2004)
