A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the...http://www.google.fr/patents/US8158484?utm_source=gb-gplus-shareBrevet US8158484 - Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
Method of forming an inverted T shaped channel structure for an inverted T ...
