A nonvolatile semiconductor memory device comprising: a semiconductor substrate (20); and a memory transistor (100) including a source region (20S) and a drain region (20D) which are impurity diffusion layers formed in the semiconductor substrate, a tunnel insulating layer (25) formed on the semiconductor...http://www.google.fr/patents/US6249021?utm_source=gb-gplus-shareBrevet US6249021 - Nonvolatile semiconductor memory device and method of manufacturing the same
Nonvolatile semiconductor memory device and method of manufacturing the same
