Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N2, O2, and a hydrocarbon. By etching the low capacitance dielectric layer with a plasma created out of the etch chemistry, fast etch rates...http://www.google.fr/patents/US6696366?utm_source=gb-gplus-shareBrevet US6696366 - Technique for etching a low capacitance dielectric layer
Technique for etching a low capacitance dielectric layer
