An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one...http://www.google.fr/patents/US6388285?utm_source=gb-gplus-shareBrevet US6388285 - Feram cell with internal oxygen source and method of oxygen release
Feram cell with internal oxygen source and method of oxygen release
