A method for fabricating a resistive load element for a semiconductor device can be used with standard semiconductor processes. A layer of second level poly is deposited and lightly doped P-type. A resist mask is used to dope selected regions of the poly layer N-type. The poly layer is then patterned...http://www.google.fr/patents/US5196233?utm_source=gb-gplus-shareBrevet US5196233 - Method for fabricating semiconductor circuits
