The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at least a step of epitaxial lateral overgrowth...http://www.google.fr/patents/US20050217565?utm_source=gb-gplus-shareBrevet US20050217565 - Method for epitaxial growth of a gallium nitride film separated from its substrate
Method for epitaxial growth of a gallium nitride film separated from its ...
Numéro de demande: 10/516,358 Numéro de publication: US 2005/0217565 A1 Date de dépôt: 28 mai 2003 Brevet délivré: US7488385 ( Date de délivrance 10 févr. 2009)
