A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer is between the...http://www.google.fr/patents/US7612390?utm_source=gb-gplus-shareBrevet US7612390 - Heterojunction transistors including energy barriers
Heterojunction transistors including energy barriers
