The present invention relates to a semiconductor device and a semiconductor integrated circuit. The semiconductor device comprises a semiconductor layer comprising a channel region, a source and a drain regions and at least one lower impurity concentration region interposed between the channel region...http://www.google.fr/patents/US6617612?utm_source=gb-gplus-shareBrevet US6617612 - Semiconductor device and a semiconductor integrated circuit
Semiconductor device and a semiconductor integrated circuit
