A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation...http://www.google.fr/patents/US5117114?utm_source=gb-gplus-shareBrevet US5117114 - High resolution amorphous silicon radiation detectors
High resolution amorphous silicon radiation detectors
