A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with...http://www.google.fr/patents/US20100014344?utm_source=gb-gplus-shareBrevet US20100014344 - Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof
Switchable two terminal multi-layer perovskite thin film resistive device ...
Numéro de demande: 12/586,147 Numéro de publication: US 2010/0014344 A1 Date de dépôt: 17 sept. 2009 Brevet délivré: US8089111 ( Date de délivrance 3 janv. 2012)
