A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop...http://www.google.fr/patents/US7251182?utm_source=gb-gplus-shareBrevet US7251182 - Semiconductor memory device and semiconductor integrated circuit device
Semiconductor memory device and semiconductor integrated circuit device
