Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around...http://www.google.fr/patents/US8173550?utm_source=gb-gplus-shareBrevet US8173550 - Method for positioning spacers for pitch multiplication
Method for positioning spacers for pitch multiplication
